| PART |
Description |
Maker |
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| RB706F-40 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| SSM6G18NU |
Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| 1SS369 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| CCS15S40 |
Schottky Barrier Diode Silicon Epitaxial
|
Toshiba Semiconductor
|
| 1SS315 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| DSR05S30U |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| 1SS294 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| HN20S01FU |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
